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of a device s natural internal parasitic distributed capacitances and inductances and the problems that occur as the wavelength of the RF signal becomes a significant portion of the size of the physical components Both will have a significant effect on the device s true RF behavior S parameters are described by S21, S12, S11, and S22 S21 is the forward transmission coefficient (representing the stage gain); S12 is the reverse transmission coefficient (representing the reverse gain, or isolation); S11 is the input reflection coefficient (representing the input return loss); and S22 is the output reflection coefficient (representing the output return loss) Figure 153 combines all of these S parameters into the gains and reflections of a single black box for a simplified graphical description Basically, S parameters are voltage ratios referenced to 50 ohms, since a voltage comparison is all that need be obtained to find any S parameter at the same impedance But a complete S parameter is a vector quantity, taking into account not only the magnitude, but also the phase The vector quantity allows the analysis of stability and complex impedances while both ports of the device are terminated in 50 ohms Considering that S parameters are the voltage ratio of a port input potential to the reflected potential, or of the input potential to the output potential, it can be seen that any device can easily be accurately characterized for any RF circuit

Connections: Image Formats: Video Capture Format: Video Capture Resolutions: Frames per Second: Maximum Video Length: Size: Weight: Other Features:

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